A novel characterization metric for phase change memory based on the measured cell resistance during RESET programming is introduced. We show that this dasiadynamic resistancepsila (R<sub>d</sub>) is inversely related to the programming current (I), as R<sub>d</sub> = [A/I] + B. While the slope parameter A depends only on the intrinsic properties of the phase change material, the intercept B also depends on the effective physical dimensions of the memory element. We demonstrate that these two parameters provide characterization and insight into the degradation mechanisms of memory cells during operation.
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